Title :
Vapour-grown 1.3 ¿m InGaAsP/InP avalanche photodiodes
Author :
Olsen, G.H. ; Kressel, H.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
A novel planar InGaAsP/InP avalanche photodiode structure prepared by vapour-phase epitaxy is described. Avalanche gain up to 20 at 1.3 ¿m and at reverse breakdown of 65 V has been measured.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; vapour phase epitaxial growth; 1.3 micron illumination; 20 avalanche gain; 65 V reverse breakdown; InGaAsP/InP avalanche photodiodes; VPE; planar structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790100
