Trends in optocoupler radiation degradation

Author

Miyahira, T.F. ; Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2868

Lastpage

2873

Abstract

Proton-radiation test results for new optocoupler technologies are compared with those of older optocouplers. The new devices are far more resistant to displacement damage effects and have a much higher current-transfer ratio (CTR). The improvements are due to improved optical-coupling efficiency in combination with light-emitting diode (LED) technologies that are inherently more resistant to lifetime degradation. Because of these changes, CTR degradation is no longer dominated by LED damage. LED degradation, gain degradation, and photoresponse degradation all contribute to the overall changes in CTR after irradiation in the newer device types.

Keywords

light emitting diodes; opto-isolators; proton effects; semiconductor device testing; 50 MeV; LED degradation; LED technologies; current-transfer ratio; displacement damage effect resistance; gain degradation; lifetime degradation resistance; optical-coupling efficiency; optocoupler radiation degradation; photoresponse degradation; proton-radiation test results; Degradation; Light emitting diodes; NASA; Photoconductivity; Photodiodes; Phototransistors; Propulsion; Protons; Space technology; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805350

Filename

1134233