• DocumentCode
    949689
  • Title

    Orientation dependence of n-type GaAs intrinsic avalanche response time

  • Author

    Berenz, J.J. ; Kinoshita, J. ; Hierl, T.L. ; Charles, A. Lee

  • Author_Institution
    Varian Associates, Polo Alto, USA
  • Volume
    15
  • Issue
    5
  • fYear
    1979
  • Firstpage
    150
  • Lastpage
    152
  • Abstract
    The intrinsic avalanche response time of n-type GaAs has been measured for each of the three principal crystallographic orientations: <100>, <110> and <111>. The experimental response times are compared with theoretical values computed using the most recent ionisation-rate data. The <111> orientation is found to have the shortest response time and the <110> has the longest response time, for a nominal net donor density of 4.5 × 1016 cm¿3.
  • Keywords
    III-V semiconductors; avalanche diodes; gallium arsenide; high-frequency effects; impact ionisation; intrinsic avalanche response time; n-type GaAs; nominal net donor density of 4.5 x 1016 cm-3; orientation dependence; principal crystallographic orientations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790107
  • Filename
    4243026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949689