Title :
Orientation dependence of n-type GaAs intrinsic avalanche response time
Author :
Berenz, J.J. ; Kinoshita, J. ; Hierl, T.L. ; Charles, A. Lee
Author_Institution :
Varian Associates, Polo Alto, USA
Abstract :
The intrinsic avalanche response time of n-type GaAs has been measured for each of the three principal crystallographic orientations: <100>, <110> and <111>. The experimental response times are compared with theoretical values computed using the most recent ionisation-rate data. The <111> orientation is found to have the shortest response time and the <110> has the longest response time, for a nominal net donor density of 4.5 × 1016 cm¿3.
Keywords :
III-V semiconductors; avalanche diodes; gallium arsenide; high-frequency effects; impact ionisation; intrinsic avalanche response time; n-type GaAs; nominal net donor density of 4.5 x 1016 cm-3; orientation dependence; principal crystallographic orientations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790107
