Title :
Higher output power from BARITT diodes using ion implantation
Author :
Armstrong, B. Mervyn ; Moore, R.A. ; Wakefield, J.
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
Phosphorus-ion implantation has been used in simple m-n-p+ Baritt diodes to controllably modify electric-field profiles and give increased output power.
Keywords :
BARITT diodes; ion implantation; phosphorus; P ion implantation; electric field profile control; increased output power; metal-n-p+ devices; simple m-n-p+ Baritt diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790109
