Title :
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
Author :
Härkönen, J. ; Tuominen, E. ; Tuovinen, E. ; Lassila-Perini, K. ; Mehtälä, P. ; Nummela, S. ; Nysten, J. ; Heikkilä, P. ; Ovchinnikov, V. ; Palokangas, M. ; Yli-Koski, M. ; Palmu, L. ; Kallijärvi, S. ; Alanko, T. ; Laitinen, P. ; Pirojenko, A. ; Riihimäki
Author_Institution :
CERN/EP, Helsinki Inst. of Phys., Geneva, Switzerland
fDate :
12/1/2002 12:00:00 AM
Abstract :
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Keywords :
carrier lifetime; leakage currents; oxidation; p-i-n photodiodes; proton effects; radiation hardening (electronics); silicon radiation detectors; surface photovoltage; 15 MeV; SPV method; Si:O; minority carrier diffusion lengths; oxygen-enriched float-zone pin-diodes; oxygenation effect; proton irradiation; radiation hardness; reverse bias leakage currents; silicon detectors; surface photovoltage method; Conductivity; Laboratories; Large Hadron Collider; Leakage current; Microelectronics; Physics; Protons; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805345
