DocumentCode
949722
Title
IV and CV curves for irradiated prototype BTeV silicon pixel sensors
Author
Coluccia, Maria R. ; Appel, J.A. ; Chiodini, G. ; Christian, D.C. ; Kwan, S.W. ; Sellberg, G. ; Uplegger, L.
Author_Institution
Fermi Nat. Accel. Lab., USA
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2914
Lastpage
2918
Abstract
We present IV and CV curves for irradiated prototype n+/n/p+ silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200-MeV protons up to 6×1014 protons/cm2.
Keywords
position sensitive particle detectors; proton effects; semiconductor device testing; silicon radiation detectors; 200 MeV; BTeV experiment; CV curves; Fermilab; IV curves; heavy quark experiment; n+/n/p+ Si pixel sensors; p-spray; p-stop; pixel isolation techniques; proton irradiation; vertex detectors; Degradation; Detectors; Ionizing radiation sensors; Laboratories; Nuclear physics; Particle beams; Protons; Prototypes; Silicon; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805419
Filename
1134240
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