Title :
High peripheral power density GaAs f.e.t. oscillator
Author :
Joshi, J.S. ; Turner, J.A.
Author_Institution :
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
Peripheral power density (p.p.d.), i.e. the output power per Unit gate width is defined as a figure of merit for GaAs f.e.t. oscillators. An X-band oscillator circuit using series and shunt feedback is described and its performance characteristies indicated. It is shown that this GaAs f.e.t. oscillator circuit configuration has the highest peripheral power density.
Keywords :
field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; GaAs FET oscillators; SHF; X-band oscillator circuit; microwave oscillators; performance characteristics; peripheral power density; series and shunt feedback;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790116
