Title :
Study of transient current induced by heavy-ion in NMOS/SOI transistors
Author :
Colladant, T. ; Flament, O. ; L´Hoir, A. ; Ferlet-Cavrois, V. ; D´hose, C. ; du Port de Potcharra, J.
Author_Institution :
Groupe de Phys. des Solides, Paris VI & VII Univ., France
fDate :
12/1/2002 12:00:00 AM
Abstract :
The parasitic bipolar transistor of NMOS/SOI transistors is a key element to determine the single-event upset (SEU) sensitivity. Parasitic bipolar transistor response has been investigated through transient current measurements induced by high energy heavy ions and three-dimensional (3-D) simulations. Experimental results reported allow to estimate the parasitic current gain as a function of the heavy ion location in the MOS transistor.
Keywords :
MOSFET; ion beam effects; silicon-on-insulator; NMOS/SOI transistor; heavy ion irradiation; parasitic bipolar transistor; parasitic current gain; single-event upset sensitivity; three-dimensional simulation; transient current; Bipolar transistors; Current measurement; Dielectric substrates; Dielectrics and electrical insulation; Isolation technology; MOS devices; MOSFETs; Silicon on insulator technology; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805437
