• DocumentCode
    949826
  • Title

    Gamma enhancement of proton-induced SEE cross section in a CMOS SRAM

  • Author

    Erhardt, Lorne S. ; Haslip, Dean S. ; Cousins, Tom ; Buhr, Robert ; Estan, Diego

  • Author_Institution
    Defence R&D Canada, Ottawa, Ont., Canada
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    2984
  • Lastpage
    2989
  • Abstract
    CMOS SRAM parts (NEC 431000ACZ-70L) were tested for possible combined effects of gamma and proton irradiation. The parts were irradiated with a 60Co source to a variety of doses and at different dose rates. These parts were subsequently subjected to identical tests for proton-induced single-event effects (SEES). The cross section for proton-induced SEES increased with the prior 60Co dose and also showed an enhancement at lower dose rates.
  • Keywords
    CMOS memory circuits; SRAM chips; gamma-ray effects; proton effects; CMOS SRAM; NEC 431000ACZ-70L; combined effect; gamma irradiation; proton irradiation; single-event effect cross-section; stress synergy; Gamma rays; National electric code; Protons; Random access memory; Research and development; SRAM chips; Single event upset; Stress; Testing; Writing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.805368
  • Filename
    1134250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949826