DocumentCode :
949851
Title :
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
Author :
McMorrow, Dale ; Lotshaw, William T. ; Melinger, Joseph S. ; Buchner, Stephen ; Pease, Ronald L.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
49
Issue :
6
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
3002
Lastpage :
3008
Abstract :
Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.
Keywords :
analogue integrated circuits; comparators (circuits); laser beam effects; operational amplifiers; two-photon processes; ICs; backside injection; bulk silicon wafers; carrier generation; charge track; error injection; microelectronic circuitry; operational amplifier; single-event transients; subbandgap laser-induced single event effects; three-dimensional mapping; two-photon absorption; voltage comparator; Absorption; Laser excitation; Optical materials; Optical pulse generation; Optical pulses; Pulse circuits; Semiconductor lasers; Semiconductor materials; Silicon; Ultrafast optics;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.805337
Filename :
1134253
Link To Document :
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