Title :
Amorphous-silicon field-effect device and possible application
Author :
le Comber, P.G. ; Spear, W.E. ; Ghaith, Alaa
Author_Institution :
University of Dundee, Carnegie Laboratory of physics, Dundee, UK
Abstract :
The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel.
Keywords :
insulated gate field effect transistors; address matrix application; amorphous Si FET; glow discharge deposited;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790126
