• DocumentCode
    949886
  • Title

    Amorphous-silicon field-effect device and possible application

  • Author

    le Comber, P.G. ; Spear, W.E. ; Ghaith, Alaa

  • Author_Institution
    University of Dundee, Carnegie Laboratory of physics, Dundee, UK
  • Volume
    15
  • Issue
    6
  • fYear
    1979
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel.
  • Keywords
    insulated gate field effect transistors; address matrix application; amorphous Si FET; glow discharge deposited;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790126
  • Filename
    4243046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949886