SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

Author

Gasiot, G. ; Ferlet-Cavrois, V. ; Baggio, J. ; Roche, R. ; Flatresse, P. ; Guyot, A. ; Morel, P. ; Bersillon, O. ; du Port de Pontcharra, J.

Author_Institution

STMicroelectronics, Crolles, France

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3032

Lastpage

3037

Abstract

This work investigates the effects of 14-MeV neutron irradiation on bulk and silicon-on-insulator (SOI) technologies. Experimental results are reported with a study on the influence of the irradiation angle. These experiments are interpreted with a nuclear interaction code (MCNP: Monte Carlo N-Particle). The device architecture and the involved materials are shown to be determining parameters with respect to the device sensitivity.

Keywords

CMOS memory circuits; Monte Carlo methods; SRAM chips; integrated circuit reliability; integrated circuit testing; neutron effects; silicon-on-insulator; 0.25 micron; 14 MeV; 14-MeV neutron irradiation; 2 Mbit; 2-Mbit SRAM test vehicle; MCNP; Monte Carlo N-Particle code; SEU sensitivity; SOI SRAM; SOI technologies; bulk SRAM; bulk technologies; device architecture; device sensitivity; irradiation angle; nuclear interaction code; semiconductor reliability; single event upset; Energy exchange; Monte Carlo methods; Neutrons; Random access memory; Semiconductor device reliability; Semiconductor materials; Silicon on insulator technology; Single event upset; Testing; Ultrafast electronics;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805395

Filename

1134257