Evidence for angular effects in proton-induced single-event upsets

Author

Reed, Robert A. ; Marshall, Paul W. ; Kim, Hak S. ; McNulty, Peter J. ; Fodness, Bryan ; Jordan, Tom M. ; Reedy, Ron ; Tabbert, Chuck ; Liu, Mike S T ; Heikkila, Walter ; Buchner, Steve ; Ladbury, Ray ; LaBel, Kenneth A.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3038

Lastpage

3044

Abstract

Historically, proton-induced single-event effects (SEES) ground test data are collected independent of the orientation of the microelectronic device to the proton beam direction. In this study, we present experimental and simulation evidence that shows an effect of over an order of magnitude on the proton-induced single-event upset (SEU) cross section when the angle of incidence of the proton beam is varied. The magnitude of this effect is shown to depend on the incidence proton energy and the device critical charge. The angular effect is demonstrated for Silicon-On-Sapphire and Silicon-On-Insulator technologies, but would not necessarily be limited to these technologies.

Keywords

CMOS memory circuits; SRAM chips; integrated circuit testing; proton effects; silicon-on-insulator; SOI CMOS SRAM; angular effects; device critical charge; incidence proton energy; proton beam angle of incidence; proton beam direction; proton-induced single-event effects; silicon-on-insulator technologies; silicon-on-sapphire technologies; Geometry; History; Logic devices; Microelectronics; NASA; Particle beams; Protons; Silicon on insulator technology; Single event upset; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805446

Filename

1134258