• DocumentCode
    949928
  • Title

    Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures

  • Author

    LaLumondiere, Stephen D. ; Koga, Rocky ; Osborn, Jon V. ; Mayer, Donald C. ; Lacoe, Ronald C. ; Moss, Steven C.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA, USA
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    3059
  • Lastpage
    3066
  • Abstract
    We report the thresholds for laser-induced latchup on epitaxial CMOS test structures for 600 nm and 815 nm excitation. We analyze the differences observed in terms of different latchup triggering mechanisms and compare the results with measurements of energetic particle-induced latchup.
  • Keywords
    CMOS integrated circuits; laser beam effects; semiconductor epitaxial layers; 600 nm; 815 nm; epitaxial CMOS test structure; transient laser-induced latchup; wavelength dependence; CMOS process; Energy measurement; Epitaxial layers; Laser excitation; Laser theory; Pulse measurements; Pulsed laser deposition; Substrates; Surface emitting lasers; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.805381
  • Filename
    1134261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949928