• DocumentCode
    949951
  • Title

    2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

  • Author

    Salhi, A. ; Rouillard, Y. ; Angellier, J. ; Grech, P. ; Vicet, A.

  • Author_Institution
    Centre d´´Electronique et de Micro-optoelectronique de Montpellier, Univ. Montpellier, France
  • Volume
    40
  • Issue
    7
  • fYear
    2004
  • fDate
    4/1/2004 12:00:00 AM
  • Firstpage
    424
  • Lastpage
    425
  • Abstract
    Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; 2.61 micron; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb system; continuous wave regime; double quantum well laser diodes fabrication; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040281
  • Filename
    1283602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949951