Title :
2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold
Author :
Salhi, A. ; Rouillard, Y. ; Angellier, J. ; Grech, P. ; Vicet, A.
Author_Institution :
Centre d´´Electronique et de Micro-optoelectronique de Montpellier, Univ. Montpellier, France
fDate :
4/1/2004 12:00:00 AM
Abstract :
Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; 2.61 micron; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb system; continuous wave regime; double quantum well laser diodes fabrication; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040281
