Single-event transients in high-speed comparators

Single-event transients are investigated in comparators with switching speed below 80 ns, including one BiCMOS device. Modeling results show that the collapse of internal junctions after an ion strike delays the onset of collector current because of transient currents in the substrate that are not shielded by the buried layer. Transients in high-speed comparators are strongly affected by differential input voltage, but are suppressed in the bipolar comparators when the differential input voltage exceeds 200 mV. The BiCMOS device behaves differently because of the CMOS circuitry in latter stages.