Single-event transients in high-speed comparators

Author

Johnston, A.H. ; Miyahira, T.F. ; Edmonds, L.D. ; Irom, F.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3082

Lastpage

3089

Abstract

Single-event transients are investigated in comparators with switching speed below 80 ns, including one BiCMOS device. Modeling results show that the collapse of internal junctions after an ion strike delays the onset of collector current because of transient currents in the substrate that are not shielded by the buried layer. Transients in high-speed comparators are strongly affected by differential input voltage, but are suppressed in the bipolar comparators when the differential input voltage exceeds 200 mV. The BiCMOS device behaves differently because of the CMOS circuitry in latter stages.

Keywords

BiCMOS analogue integrated circuits; comparators (circuits); high-speed integrated circuits; ion beam effects; 200 mV; 80 ns; BiCMOS device; buried layer; collector current; high-speed comparator; ion strike; linear integrated circuit; single-event transient; BiCMOS integrated circuits; Delay; Electrical resistance measurement; Linear circuits; NASA; Power supplies; Propulsion; Space technology; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805397

Filename

1134264