Title :
Total-dose hardening of a bipolar-voltage comparator
Author :
Pease, Ronald L. ; Maher, M.C. ; Shaneyfelt, M.R. ; Savage, M.W. ; Baker, P. ; Krieg, J. ; Turflinger, T.L.
Author_Institution :
RLP Res. Inc., Albuquerque, NM, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
A radiation-tolerant bipolar-voltage comparator experienced severe degradation of radiation hardness when layout of the part was redrawn and the process moved from a 4-in wafer to a 6-in wafer line. The reasons for the loss in hardness are identified, and it is shown that modifications to the design layout eliminate the problem.
Keywords :
bipolar analogue integrated circuits; comparators (circuits); integrated circuit layout; integrated circuit reliability; radiation hardening (electronics); 6 in; bipolar analog circuits; bipolar-voltage comparator; degradation; design layout; radiation hardness; radiation-tolerant circuit; total-dose hardening; wafer line; Aerospace testing; Analog circuits; Cranes; Degradation; Ionization; Laboratories; Military standards; Positron emission tomography; Tellurium; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805404
