Title :
14-GHz band 1 watt GaAs f.e.t. amplifier
Author :
Sone, Jun´ichi ; Takayama, Yoichiro ; Aono, Yoichi
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
A 14.0¿14.5 GHz 1 W amplifier using 0.5 ¿m gate length power GaAs f.e.t.s has been developed. The amplifier, consisting of a cascade of three single-ended stages, realises 13 dB small-signal gain, 1.1 W output-power saturation and 39 dBm third-order intermodulation intercept. The circuit design and the microwave performance of the amplifier are discussed.
Keywords :
field effect transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; 14 GHz band 1 W GaAs FET amplifier; circuit design; microwave performance; power amplifier; three stage cascade;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790149
