Title :
Radiation effects in micro-electromechanical systems (MEMS): RF relays
Author :
McClure, Steven S. ; Edmonds, L.D. ; Mihailovich, R. ; Johnston, A.H. ; Alonzo, P. ; DeNatale, J. ; Lehman, J. ; Yui, C.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
GaAs micro-electromechanical RF relays fabricated by surface micromachining techniques were characterized for their response to total ionizing dose. Microrelays with two different geometries were studied. For one geometry, changes in switch actuation voltage at moderate dose levels were observed. For an alternative geometry, no change in actuation voltage was observed. A mechanism for dielectric charge trapping and its effect on the electrostatic force is proposed.
Keywords :
III-V semiconductors; gallium arsenide; micromachining; microrelays; radiation effects; GaAs; GaAs MEMS RF relay; dielectric charge trapping; electrostatic force; microelectromechanical system; microrelay; radiation effects; surface micromachining; switch actuation voltage; total ionizing dose; Gallium arsenide; Geometry; Microelectromechanical systems; Micromachining; Micromechanical devices; Radiation effects; Radio frequency; Relays; Switches; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805406
