DocumentCode :
950159
Title :
FDTD modelling of velocity mismatch in travelling-wave heterojunction phototransistor
Author :
Tsakmakidis, K.L. ; Gomez-Rojas, L. ; Robertson, I.D. ; Hess, O. ; Houston, P.A. ; Weiss, B.
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Volume :
40
Issue :
7
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
452
Lastpage :
454
Abstract :
Three-dimensional finite-difference time-domain modelling of a travelling-wave heterojunction phototransistor is presented. The electromagnetic model allows the simultaneous simulation of the optical and microwave properties of the travelling-wave structure. The results clearly demonstrate the effect of velocity mismatch between the optical wave and the photogenerated electrical wave.
Keywords :
III-V semiconductors; aluminium compounds; finite difference time-domain analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; semiconductor device models; FDTD; InAlGaAs; electromagnetic model; finite-difference time-domain modelling; microwave properties; optical properties; travelling wave heterojunction phototransistor; velocity mismatch;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040248
Filename :
1283622
Link To Document :
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