950165

Erratum: Rectification at n-n GaAs:(Ga,Al)As heterojunctions

Chandra, Aniruddha ; Eastman, L.F.

15

7

1979

216

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junctions; GaAlAs-GaAs heterojunctions; IV characteristics; accumulation region; depletion region; n-n heterojunctions; rectification;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19790152

4243110