Title :
An investigation of proton energy effects in SiGe HBT technology
Author :
Zhang, Shiming ; Cressler, John D. ; Subbanna, Seshu ; Groves, Rob ; Niu, Guofu ; Isaacs-Smith, Tamara ; Williams, John R. ; Bakhru, Hassaram ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
We present the first investigation of low energy (1.75 MeV) proton irradiation in SiGe HBT´s and discuss proton energy effects in SiGe HBT technology. The results show that after 1.75 MeV 1 × 1014 p/cm2, a semi-insulating substrate is obtained and the peak quality factor of the monolithic inductors is improved by about 18% at 1.6 GHz. Although large current gain degradation for the SiGe HBT´s was observed in the RF bias region after 1 × 1014 p/cm2, the degradation in peak fT is only about 11%. Proton energy studies from 1.75 MeV to 200 MeV in SiGe HBT´s suggest that the conventional damage factor can be used to estimate energy-dependent proton-induced radiation damage in this technology.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; proton effects; semiconductor device measurement; semiconductor materials; 1.6 GHz; 1.75 to 200 MeV; RF bias region; SiGe; SiGe HBT technology; current gain degradation; cutoff frequency; damage factor; energy-dependent proton-induced radiation damage; forward Gummel characteristics; low energy proton irradiation; monolithic inductors; peak quality factor; peak threshold frequency degradation; proton energy effects; reciprocal current gain; semi-insulating substrate; Conductivity; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microelectronics; Protons; Radio frequency; Silicon germanium; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805361
