Title :
Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxy
Author_Institution :
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
The growth of m.b.e. GaAs suitable for f.e.t. fabrication is reported. The m.b.e. structure consists of an n+ = 2.5×1018 cm¿3 contact layer on top of an n+ = 3.5×1017 cm¿3 active layer. Using this material, f.e.t.s. have been fabricated that have a minimum noise figure of 1.5 dB with an associated gain of 15 dB at 8 GHz. These are the best results yet reported for low-noise m.b.e. GaAs f.e.t.s.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; GaAs; MESFET; Schottky barrier gate FET; fabrication; gain; microwave; minimum noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790154
