DocumentCode
950226
Title
Visible light emission from GaAs field-effect transistor
Author
Mimura, Takashi ; Suzuki, Hidetake ; Fukuta, Masumi
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
65
Issue
9
fYear
1977
Firstpage
1407
Lastpage
1408
Abstract
Visible light radiation has been observed at the drain of a Schottky-barrier-gate GaAs microwave field-effect transistor (FET). The radiation takes place at the region where the drain current increases after saturation. The origin of the radiation has been attributed to impact ionization within the stationary high-field domain caused by negative differential mobility of n-GaAs.
Keywords
Electrodes; Electrons; Equations; Gallium arsenide; Ionizing radiation; Lattices; Microwave FETs; Microwave devices; Potential energy; Shape;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1977.10727
Filename
1454996
Link To Document