Title :
Measurements of impedance of DH semiconductor lasers
Author :
Kuwahara, H. ; Daido, Y. ; Furuta, H.
Author_Institution :
Fujitsu Laboratories, Kawasaki, Japan
Abstract :
Impedance of GaAs-AlGaAs DH lasers were measured to frequency and the bias current. Real parts of the impedance were about 0.7-1.8 Ω and they were almost flat in the frequency range of 0.4-1.9 GHz. Imaginary parts were found to be capacitive and its absolute value increases with frequency.
Keywords :
Bonding; Capacitance measurement; Circuits; DH-HEMTs; Electrical resistance measurement; Frequency; Impedance measurement; Measurement errors; Semiconductor device measurement; Semiconductor lasers;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1977.10731
