DocumentCode
950286
Title
Measurements of impedance of DH semiconductor lasers
Author
Kuwahara, H. ; Daido, Y. ; Furuta, H.
Author_Institution
Fujitsu Laboratories, Kawasaki, Japan
Volume
65
Issue
9
fYear
1977
Firstpage
1412
Lastpage
1413
Abstract
Impedance of GaAs-AlGaAs DH lasers were measured to frequency and the bias current. Real parts of the impedance were about 0.7-1.8 Ω and they were almost flat in the frequency range of 0.4-1.9 GHz. Imaginary parts were found to be capacitive and its absolute value increases with frequency.
Keywords
Bonding; Capacitance measurement; Circuits; DH-HEMTs; Electrical resistance measurement; Frequency; Impedance measurement; Measurement errors; Semiconductor device measurement; Semiconductor lasers;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1977.10731
Filename
1455000
Link To Document