Title :
Gate dielectric-breakdown-induced microstructural damage in MOSFETs
Author :
Tang, Lei Jun ; Pey, Kin Leong ; Tung, Chih Hang ; Radhakrishnan, M.K. ; Lin, Wen He
Author_Institution :
Inst. of Microelectron., Singapore
fDate :
3/1/2004 12:00:00 AM
Abstract :
Numerous failure mechanisms associated with hard breakdowns (HBD) in ultrathin gate oxides were physically studied with high-resolution transmission electron microscope (TEM). Migration of silicide from silicided gate and source/drain regions, abnormal growth of dielectric-breakdown-induced epitaxy (DBIE), poly-Si gate meltdown and recrystallization, severe damage in Si substrate, and total epitaxy of poly-Si gate and Si substrate of the entire transistor are among the common microstructural damages observed in metal-oxide-semiconductor field-effect transistors (MOSFETs) after HBDs in gate oxides (Gox) were observed electrically. The type of catastrophic failures and its degree of damage were found to be strongly dependent on the allowable current density and total resistance of the breakdown path during the breakdown transient. The physical analysis data from TEM analysis allow us to establish the sequence of the physical damage associated with the Gox HBD in narrow transistors. The proposed model is able to predict the next possible microstructural damage induced by HBD. Such knowledge will allow failure analysts to be able to retro-predict the current and power consumption in a field EOS/ESD failure based on the physical analysis and propose a knowledgeable guess on the potential root cause of the failures.
Keywords :
MOSFET; dielectric thin films; failure analysis; focused ion beam technology; leakage currents; semiconductor device breakdown; silicon; solid phase epitaxial growth; transmission electron microscopy; MOSFET; Si; current consumption; dielectric-breakdown-induced epitaxy; failure analysis; failure mechanisms; gate dielectric-breakdown-induced microstructural damage; gate dielectrics; hard breakdowns; metal-oxide-semiconductor field-effect transistors; microstructural damages; poly-Si gate meltdown; power consumption; recrystalization; silicide migration; silicided gate; silicon substrate; source-drain regions; transmission electron microscope; ultrathin gate oxides; Current density; Data analysis; Dielectric substrates; Electric breakdown; Epitaxial growth; FETs; Failure analysis; MOSFETs; Silicides; Transmission electron microscopy;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.824374