Title :
Planar photodiodes made from vapour-phase epitaxial InxGa1¿xAs
Author :
Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Planar photodiodes for the 1.0¿1.3 ¿m wavelength range have been fabricated by diffusing Zn into vapour-phase epitaxial InxGa1¿xAs grown on a GaAs substrate. For compositions x=0¿0.31, the dark current and spectral response are reported. The dark-current density for x=0.17 was as low as 5.4 × 10¿6 A/cm2 at VB/2.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; vapour phase epitaxial growth; GaAs substrate; InxGa1-xAs; dark current; planar photodiodes; spectral response; vapour phase epitaxial;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790169
