Title :
Conductive atomic force microscopy application on leaky contact analysis and characterization
Author :
Chuang, J.H. ; Lee, Jon C.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
fDate :
3/1/2004 12:00:00 AM
Abstract :
Conductive atomic force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate-oxide integrity. In this paper, we describe the application of C-AFM to fault identification at the contact level. We show that current mapping using C-AFM can easily isolate faulty contacts. In addition, C-AFM can also provide I/V characterization for root cause analysis of failures.
Keywords :
atomic force microscopy; dielectric thin films; failure analysis; integrated circuits; leakage currents; semiconductor technology; I/V characterization; conductive atomic force microscopy; dielectric film; electrical characterization; fault identification; gate-oxide integrity; integrated circuits; leaky contact analysis; leaky contact characterization; physical failure analysis; semiconductor manufacturing; Atomic force microscopy; Circuit faults; Contacts; Electron emission; Failure analysis; Scanning electron microscopy; Semiconductor device manufacture; Surface resistance; Surface topography; Voltage;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.825556
