Title :
Single high-order transverse mode surface-emitting laser with controlled far-field pattern
Author :
Shinada, S. ; Koyama, F.
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Single transverse mode vertical-cavity surface-emitting lasers (VCSELs) with high output power are important for high-speed data links, optical recording, laser processing, and so on. We demonstrate a single high-order transverse mode VCSEL with narrow trenches formed on its top surface by using a focused ion beam. The formation of four straight cross trenches resulted in the selection of a stable LP/sub 41/ mode oscillation. A large far-field angle of the LP/sub 41/ mode, which causes a low coupling efficiency even with a multimode fiber, was drastically reduced by loading a phase shift layer. A single-lobe far-field pattern with low scattering loss was realized by loading a spatial phase shift of SiO/sub 2/. We evaluated a coupling efficiency with a single-mode fiber including its alignment tolerance. The controlled far-field pattern enables lens-free direct coupling with a single-mode fiber even for large active-area VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; focused ion beam technology; gallium arsenide; laser modes; optical fibre couplers; quantum well lasers; sputter etching; surface emitting lasers; GaAs-AlGaAs; GaAs/AlGaAs QW VCSEL; SiO/sub 2/; alignment tolerance; controlled far-field pattern; coupling efficiency; focused ion beam; large far-field angle; lens-free direct coupling; low scattering loss; multimode fiber; narrow trenches; phase shift layer loading; single high-order transverse mode surface-emitting laser; single-lobe far-field pattern; single-mode fiber; spatial phase shift loading; stable LP/sub 41/ mode oscillation; straight cross trench formation; Distributed Bragg reflectors; Etching; Ion beams; Laser modes; Optical control; Optical scattering; Power generation; Power lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.804674