Title :
15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer
Author :
Stegmueller, B. ; Baur, E. ; Kicherer, M.
Author_Institution :
Corporate Res., Infineon Technol. AG, Munich, Germany
Abstract :
Monolithically integrated InGaAsP 1.55-μm ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-μm-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme.
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; quantum confined Stark effect; quantum well lasers; waveguide lasers; 1.55 micron; 10 Gbit/s; 10-Gb/s transmission experiments; 15 GHz; 15-GHz modulation performance; 18 mA; 200 micron; 3-dBe cutoff frequency; InGaAsP; InGaAsP integrated DFB laser diode EA modulator; MQW layer structure; electroabsorption modulator; low threshold currents; monolithic integration; multiple-quantum-well double-stack active layer; quantum confined Stark effect; ridge waveguide distributed feedback laser diodes; voltage swing; Diode lasers; Distributed feedback devices; Laser feedback; Monolithic integrated circuits; Optical device fabrication; Optical feedback; Potential well; Quantum well devices; Quantum well lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.804664
