Title :
Hole traps in n-InP by d.l.t.s. and transient capacitance techniques
Author :
Choudhury, A.N.M.M. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
The parameter of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4=10¿13 cm2 have been measured.
Keywords :
III-V semiconductors; capacitance; deep levels; hole traps; indium compounds; semiconductor epitaxial layers; DLTS; III-V semiconductors; activation energy; capture cross section; deep level transient spectroscopy; hole trap; n-InP; transient capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790175
