Title :
CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown
Author :
Xiao, Enjun ; Yuan, J.S. ; Yang, Hong
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas, Arlington, TX, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.
Keywords :
CMOS integrated circuits; MOSFET; circuit reliability; hot carriers; semiconductor device breakdown; CMOS DC reliability; CMOS RF reliability; MOSFET; SpectreRF simulation; circuit reliability; device stress measurement; dielectric breakdown; hot carrier stress; low-noise amplifier; oxide soft breakdown; voltage-controlled oscillators; wireless communication; Breakdown voltage; Circuits; Degradation; Electric breakdown; Hot carriers; Interface states; MOSFETs; Radio frequency; Thermal stresses; Voltage-controlled oscillators;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.824365
