Titanium nitride as spreading layers for AlGaInP visible LEDs

Author

Liu, Chien-Chih ; Wang, Wei-Ting ; Houng, Mau-Phon ; Wang, Yeong-Her ; Chen, Shi-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

14

Issue

12

fYear

2002

Firstpage

1665

Lastpage

1667

Abstract

Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical films; sputtered coatings; titanium compounds; transparency; AlGaInP visible LEDs; AlGaInP-TiN; LED current crowding; LED surface light extraction; TiN spreading layers; external efficiency; high transparency; low sheet resistance; reactive RF sputtering; Conducting materials; Conductive films; Indium tin oxide; Inorganic materials; Lattices; Light emitting diodes; Optical films; Sputtering; Thermal conductivity; Titanium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.804669

Filename

1058245