Title :
Titanium nitride as spreading layers for AlGaInP visible LEDs
Author :
Liu, Chien-Chih ; Wang, Wei-Ting ; Houng, Mau-Phon ; Wang, Yeong-Her ; Chen, Shi-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical films; sputtered coatings; titanium compounds; transparency; AlGaInP visible LEDs; AlGaInP-TiN; LED current crowding; LED surface light extraction; TiN spreading layers; external efficiency; high transparency; low sheet resistance; reactive RF sputtering; Conducting materials; Conductive films; Indium tin oxide; Inorganic materials; Lattices; Light emitting diodes; Optical films; Sputtering; Thermal conductivity; Titanium;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.804669
