Title :
Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
Author :
Lin, Y.C. ; Chang, S.J. ; Su, Y.K. ; Tsai, T.Y. ; Chang, C.S. ; Shei, S.C. ; Hsu, S.J. ; Liu, C.H. ; Liaw, U.H. ; Chen, S.C. ; Huang, B.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87% at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 /spl times/ 10/sup -4/ /spl Omega/ /spl middot/ cm/sup 2/ and 1 /spl times/ 10/sup -3/ /spl Omega/ /spl middot/ cm/sup 2/, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.
Keywords :
III-V semiconductors; contact resistance; electroluminescence; gallium compounds; indium compounds; light emitting diodes; light transmission; nickel; ohmic contacts; tin compounds; wide band gap semiconductors; 20 mA; 3.5 nm; 470 nm; 5 nm; 5.26 mW; 6.59 mW; 60 nm; EL spectra; GaN; GaN-based light-emitting diodes; Ni-Au; Ni-Au p-contact layer; Ni-ITO; Ni-InSnO; Ni/ITO p-type ohmic contacts; electrical properties; normalized transmittance; optical properties; output power; specific contact resistance; transparent contact; Annealing; Contact resistance; Displays; Gallium nitride; Indium tin oxide; Light emitting diodes; Light sources; Ohmic contacts; Optical films; Power generation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.804649
