• DocumentCode
    950579
  • Title

    Spectral characteristics of small- and large-volume CdTe detectors: comparison among hemispheric, planar, and pixellated structure

  • Author

    Sowinska, M. ; Hennard, G. ; Feder, D. ; Hage-Ali, M. ; Koebel, J.M. ; Zumbiehl, A. ; Ayoub, M. ; Siffert, P.

  • Author_Institution
    EURORAD, Strasbourg, France
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    3306
  • Lastpage
    3313
  • Abstract
    Progress achieved in the quality of II-VI compounds over the last few years offers new possibilities in the development of large-volume radiation detectors. Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) are the semiconductor materials of great interest for room temperature application in X-ray and γ-ray detectors in a number of fields. The performance of CdTe (and CdZnTe) depends largely not only on the semiconductor material, but also on the contacts as well as the surface preparation procedures. In this paper, the comparison of spectral properties (57Co and 137Cs) among different types of detector, planar, hemispheric, and planar pixellated structure, is reported. The detectors under investigation were of 65- and 500-mm3 active volume with a sensitive thickness of 2.5 and 5 mm, respectively. The bias voltage applied varied from 100 to 300 V and from 100 to 1200 V, respectively, for small- (5 × 5 × 2.5 mm3) and large-volume (10 × 10 × 5 mm3) detectors. The lowest leakage current was observed for the planar pixellated detectors, and in the case of the hemispheric, it was more than twice lower than in the planar detectors. The large-volume planar detectors did not support high-voltage applications contrary to the hentispheric ones. The energy resolution of the photo-peak at 122 keV (57Co) was less than 7%, and at 662 keV (137Cs), it was less than 5% (typically 34%) for small- and large-volume hemispheric detectors. The peak-to-valley ratio (PN) varied only slightly with increasing voltage in the small planar detectors, while in the hemispheric detectors, this value was close to 12 for 57Co and twice higher for 137Cs gamma source. The photo-peak efficiency was three to four times higher in the hemispheric than in planar devices. The highest values of photo-peak intensity as well as photo-peak efficiency have been found for 4 × 4 matrix elements. The total spectrum efficiency and PN ratio values for the latter are situated between hemispheric and planar detectors.
  • Keywords
    II-VI semiconductors; X-ray detection; cadmium compounds; gamma-ray detection; semiconductor counters; γ-ray detectors; 10 mm; 100 to 1200 V; 122 keV; 2.5 mm; 5 mm; 662 keV; 137Cs; 57Co; CdTe; CdZnTe; X-ray detectors; bias voltage; energy resolution; hemispheric structure; large-volume radiation detectors; lowest leakage current; matrix elements; photopeak efficiency; pixellated structure; planar structure; room temperature application; semiconductor materials; sensitive thickness; spectral characteristics; surface preparation procedures; Cadmium compounds; Gamma ray detection; Gamma ray detectors; Gas detectors; Leak detection; Radiation detectors; Semiconductor materials; Temperature; Voltage; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.806239
  • Filename
    1134321