Title :
New semiconductor active device: the conductivity-controlled transistor
Author :
Caruso, A. ; Spirito, P. ; Vitale, G.
Author_Institution :
University of Naples, Istituto Electrotecnico, Napoli, Italy
Abstract :
A new semiconductor 3-terminal device has been realised in which a majority-carrier current, flowing in a N+-N-N+ structure, is controlled by a minority-carrier current supplied by a forward-biased P+-N junction. The properties of this device are presented and discussed in terms of a physical model.
Keywords :
semiconductor device models; transistors; N+-N-N+ structure; conductivity controlled transistor; controlling minority carrier current; forward biased p+-n junction; majority carrier current control; physical model; properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790189
