Title :
Substrate conduction in GaAs m.e.s.f.e.t.s
Author :
Borden, Peter G.
Author_Institution :
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
Substrate currents in a gateless GaAs m.e.s.f.e.t. have been measured at d.c, 0.9 MHz and 2 GHz. The results are consistent with the assumption of substrate conduction at high frequencies and active-layer conduction alone at low frequencies.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.2 MHz conduction; 2 GHz conduction; DC conduction; GaAs MESFET substrate conduction; high frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790217
