• DocumentCode
    950825
  • Title

    Substrate conduction in GaAs m.e.s.f.e.t.s

  • Author

    Borden, Peter G.

  • Author_Institution
    Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
  • Volume
    15
  • Issue
    11
  • fYear
    1979
  • Firstpage
    307
  • Lastpage
    308
  • Abstract
    Substrate currents in a gateless GaAs m.e.s.f.e.t. have been measured at d.c, 0.9 MHz and 2 GHz. The results are consistent with the assumption of substrate conduction at high frequencies and active-layer conduction alone at low frequencies.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.2 MHz conduction; 2 GHz conduction; DC conduction; GaAs MESFET substrate conduction; high frequencies;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790217
  • Filename
    4243269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=950825