Title :
Thin-film superconducting inductors for power electronics
Author :
Mogro-Campero, A. ; Roshen, W.A. ; Turner, L.G. ; Black, R.D.
Author_Institution :
GE Res. & Dev. Center, Schenectady, NY, USA
Abstract :
Superconducting thin-film inductors promise to be key elements in high-frequency, high-power density, high-efficiency power supplies. A thin-film (0.6 mu m-thick) YB/sub 2/Cu/sub 3/O/sub 7/ inductor capable of handling currents up to 12 A DC was found to have a Q value of 1300 at 260 MHz and 77 K, a factor of 20 higher than an identical inductor made of 15 mu m thick Cu; this improvement factor is shown to be >64 at lower frequencies (a few MHz).<>
Keywords :
annealing; barium compounds; high-temperature superconductors; inductors; power electronics; superconducting epitaxial layers; superconducting junction devices; superconducting thin films; yttrium compounds; 0.6 micron; 12 A; 15 micron; 260 MHz; 750 C; 77 K; Q value; YBa/sub 2/Cu/sub 3/O/sub 7/-LaAlO/sub 3/; annealing; epitaxial thin film; high frequency power supplies; high-efficiency power supplies; power electronics; superconducting thin film inductors; Copper; Gold; High temperature superconductors; Power electronics; Power supplies; Spirals; Superconducting epitaxial layers; Superconducting thin films; Superconducting transition temperature; Thin film inductors;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
