Title :
Low-barrier-height epitaxial Ge-GaAs mixer diodes
Author :
Christou, Alex ; Davey, J.E. ; Anand, Y.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Using a thin Ge-GaAs structure, barrier height lowering of 0.2¿0.3 eV has been attained. These X-band diodes have a noise figure of 6.0¿6.5 dB at 0.75¿1.0 mW of local-oscillator power. The diodes have superior power-handling capability with Pt-Ti-Mo-Au metallisation.
Keywords :
Schottky-barrier diodes; gallium arsenide; mixers (circuits); solid-state microwave devices; Pt-Ti-Mo-Au metallisation; Schottky barrier diodes; X-band diodes; barrier height lowering of 0.2 to 0.3 eV; epitaxial Ge-GaAs mixer diodes; low barrier height diodes; microwave diodes; noise figure 6.0 to 6.5 dB at 0.75 to 1.0 mW; power handling capacity; thin Ge-GaAs structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790230
