DocumentCode :
951032
Title :
CdTe/Langmuir-film m.i.s. structures
Author :
Petty, Michael C. ; Roberts, G.G.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Volume :
15
Issue :
12
fYear :
1979
Firstpage :
335
Lastpage :
336
Abstract :
Langmuir films based on cadmium stearate have been successfully deposited on to the surface of p-type CdTe. The measured C/V curves show, for the first time, the accumulation, depletion and weak-inversion regions typical of an ideal device. The G/V curves show a sharp peak in the depletion region at high frequencies which is thought to be due to losses at interface states. An initial estimate of the density yields an average value of 1011 states cm¿2.
Keywords :
Langmuir films; cadmium compounds; metal-insulator-semiconductor structures; C/V curves; CdTe/Langmuir film MIS structures; G/V curves; characteristics; interface states density 1011/cm2; p-type CdTe;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19790238
Filename :
4243328
Link To Document :
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