• DocumentCode
    951075
  • Title

    Internal stress and degradation in short-wavelength AlGaAs double heterojunction devices

  • Author

    Ladany, I. ; Furman, T.R. ; Marinelli, D.P.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    15
  • Issue
    12
  • fYear
    1979
  • Firstpage
    342
  • Lastpage
    343
  • Abstract
    Aging tests of incoherently operated zinc-doped double-heterojunction(d.h.) lasers designed for short-wavelength (0.71¿0.72 ¿m) operation show that the introduction of buffer layers between the substrate and the d.h. structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.
  • Keywords
    III-V semiconductors; ageing; aluminium compounds; gallium arsenide; semiconductor junction lasers; 0.71 to 0.72 micron wavelength; Zn:AlGaAs DH lasers; ageing; buffer layers; degradation; internal stress; junction lasers; lattice mismatch stress reduction; semiconductor; short wavelength operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790243
  • Filename
    4243339