Title :
Room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW lasers with wire active region
Author :
Kudo, Koji ; Miyake, Yasunari ; Hirayama, Hideki ; Tamura, Shigeo ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
A room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP GRINSCH compressive strained MQW lasers with 30 approximately 60 nm wide wire active region was achieved. This device was fabricated by two-step LP-OMVPE growths on p-type InP substrate and wet chemical etching. Threshold current as low as 53 mA (L=910 mu m, J/sub th/=2.9 kA/cm/sup 2/) was obtained at RT-CW condition. The spontaneous emission peak and the lasing wavelength of strained MQW wire lasers exhibited approximately 20-meV blue shift from those of MQW film lasers cut out from the same wafer.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 30 to 60 nm; 53 mA; GRINSCH compressive strained; Ga/sub 0.3/In/sub 0.7/As-GaInAsP-InP; Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP; InP; LPE; blue shift; lasing wavelength; liquid phase epitaxy; p-type InP substrate; room temperature CW operation; semiconductor laser diodes; spontaneous emission peak; strained MQW lasers; threshold current; two-step LP-OMVPE growths; wet chemical etching; wire active region; Chemical lasers; Indium phosphide; Laser beam cutting; Quantum well devices; Spontaneous emission; Substrates; Temperature; Threshold current; Wet etching; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
