Title :
Detection of minority-carrier traps using transient spectroscopy
Author :
Brunwin, R. ; Hamilton, Blaine ; Jordan, Paul ; Peaker, A.R.
Author_Institution :
University of Manchester, Institute of Science & Technology, Manchester, UK
Abstract :
A technique for measuring the properties of deep states which trap minority carriers in the depletion region of a Schottky barrier is described. By combining minority-carrier capture and d.l.t.s. the method enables states to be separated according to their capture cross-sections as well as their emission properties. Results on GaP are described.
Keywords :
III-V semiconductors; Schottky effect; deep levels; gallium compounds; minority carriers; DLTS; GaP; Schottky barrier; deep level transient spectroscopy; depletion region; minority carrier traps detection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790248
