DocumentCode :
951184
Title :
A Simple Method for Characterizing the Bondability of Metallization Surfaces
Author :
Kato, Hiroshi
Author_Institution :
Hitachi Microcomputer Engineering,Gunma,Japan
Volume :
10
Issue :
2
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
232
Lastpage :
235
Abstract :
A probing technique is described which measures breakdown voltages of contaminating films on metal surfaces. These breakdown voltages are correlated with the bondability and wettability of the surfaces. The probe setup consists of a fine gold wire with a ball terminal and a tungsten whisker. Three examples are described. The breakdown voltage on Al metallization on a Si chip and on plated Ag film on a leadframe both correspond to the ease of Au wire bonding. In contrast, the Au-Si eutectic layer demonstrating a large breakdown voltage features poor solderability and low bonding reliability. The An ball probe is confirmed to be a convenient tool for quality control in thin-film manufacturing and device assembly processes.
Keywords :
Integrated circuit bonding; Integrated circuit metallization; Bonding; Gold; Lead; Metallization; Pollution measurement; Probes; Semiconductor films; Surface contamination; Tungsten; Wire;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1987.1134726
Filename :
1134726
Link To Document :
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