• DocumentCode
    951184
  • Title

    A Simple Method for Characterizing the Bondability of Metallization Surfaces

  • Author

    Kato, Hiroshi

  • Author_Institution
    Hitachi Microcomputer Engineering,Gunma,Japan
  • Volume
    10
  • Issue
    2
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    232
  • Lastpage
    235
  • Abstract
    A probing technique is described which measures breakdown voltages of contaminating films on metal surfaces. These breakdown voltages are correlated with the bondability and wettability of the surfaces. The probe setup consists of a fine gold wire with a ball terminal and a tungsten whisker. Three examples are described. The breakdown voltage on Al metallization on a Si chip and on plated Ag film on a leadframe both correspond to the ease of Au wire bonding. In contrast, the Au-Si eutectic layer demonstrating a large breakdown voltage features poor solderability and low bonding reliability. The An ball probe is confirmed to be a convenient tool for quality control in thin-film manufacturing and device assembly processes.
  • Keywords
    Integrated circuit bonding; Integrated circuit metallization; Bonding; Gold; Lead; Metallization; Pollution measurement; Probes; Semiconductor films; Surface contamination; Tungsten; Wire;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1987.1134726
  • Filename
    1134726