Asymmetric Y-branch tunable semiconductor laser with 1.0 THz tuning range

Author

Kuznetsov, M. ; Verlangieri, P. ; Dentai, A.G. ; Joyner, C.H. ; Burrus, C.A.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

10

fYear

1992

Firstpage

1093

Lastpage

1095

Abstract

The tuning range of the traditional tunable lasers using distributed Bragg reflection is limited by the small refractive index change that can be induced in semiconductors. The authors report the design, fabrication, and characteristics of a novel asymmetric Y-branch (AYB) tunable laser. By geometrically leveraging the index change in these laser structures, they demonstrate, using a single current control, a discrete tuning range as large as 1.0 THz, access to 24 frequency channels, and tuning rates in excess of 100 GHz/mA. AYB lasers appear promising for applications requiring wide tuning range, fast electronic frequency access, and simple low current control.<>

Keywords

laser tuning; optical design techniques; optical waveguides; refractive index; semiconductor growth; semiconductor lasers; 1.0 THz; asymmetric Y-branch; fast electronic frequency access; frequency channels; index change; laser characteristics; laser design; laser fabrication; laser structures; optical waveguides; simple low current control; single current control; tunable semiconductor laser; tuning range; tuning rates; Current control; Frequency; Laser transitions; Laser tuning; Optical design; Optical device fabrication; Optical reflection; Refractive index; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163743

Filename

163743