Title :
Drift leakage current in AlGaInP quantum-well lasers
Author :
Bour, David P. ; Treat, David W. ; Thornton, Robert L. ; Geels, Randall S. ; Welch, David F.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The temperature dependence of threshold current and quantum efficiency for GaxIn1-xP (x=0.4, 0.6; λ=680, 633 nm) single 80-Å quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; semiconductor device models; semiconductor lasers; 633 nm; 680 nm; 80 Å; AlGaInP; GaInP; SQW; drift leakage current; electron leakage current; poor p-type conductivity; quantum efficiency; quantum-well lasers; semiconductors; single quantum well; temperature dependence; threshold current; Carrier confinement; DH-HEMTs; Electrons; Leakage current; Photonic band gap; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
