Title :
A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 μm
Author :
Kagawa, Toshiaki ; Kawamura, Yuichi ; Iwamura, Hidetoshi
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
fDate :
5/1/1993 12:00:00 AM
Abstract :
The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; noise; semiconductor superlattices; 0.8 micron; 1.3 micron; 1.55 micron; 17 GHz; IR; InGaAsP-InAlAs; InP; MBE; absorption layer; electrode; flip-chip structure; gas source molecular beam epitaxy; incident light; light reflection; low multiplication factor; low-noise; photoabsorption layer; quantum efficiency; semiconductor growth; superlattice avalanche photodiode; superlattice multiplication region; transit time; wide-bandwidth; Absorption; Avalanche photodiodes; Electrodes; Fabrication; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical reflection; Substrates; Superlattices;
Journal_Title :
Quantum Electronics, IEEE Journal of
