Title :
Frequency limitation of GaAs transferred-electron devices: influence of operating d.c. and r.f. field values
Author :
Rolland, Paul Alain ; Constant, Eric ; Salmer, E. ; Fauquembergue, R.
Author_Institution :
Université de Lille I, Centre Hyperfrequences & Semiconducteurs, LA au CNRS 287, Villeneuve d´Ascq, France
Abstract :
The possibility of making use of the transferred-electron effect for power generation in the whole millimetre-wave range is shown for long and uniform-field GaAs samples. A great improvement in the upper frequency limit under large-signal operation is reported.
Keywords :
Gunn devices; gallium arsenide; microwave generation; semiconductor device models; DC field value effects; GaAs transferred electron devices; Gunn devices; RF field value effects; frequency limits; long GaAs samples; microwave generation; mm wave generation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790270
