• DocumentCode
    951338
  • Title

    Frequency limitation of GaAs transferred-electron devices: influence of operating d.c. and r.f. field values

  • Author

    Rolland, Paul Alain ; Constant, Eric ; Salmer, E. ; Fauquembergue, R.

  • Author_Institution
    Université de Lille I, Centre Hyperfrequences & Semiconducteurs, LA au CNRS 287, Villeneuve d´Ascq, France
  • Volume
    15
  • Issue
    13
  • fYear
    1979
  • Firstpage
    373
  • Lastpage
    374
  • Abstract
    The possibility of making use of the transferred-electron effect for power generation in the whole millimetre-wave range is shown for long and uniform-field GaAs samples. A great improvement in the upper frequency limit under large-signal operation is reported.
  • Keywords
    Gunn devices; gallium arsenide; microwave generation; semiconductor device models; DC field value effects; GaAs transferred electron devices; Gunn devices; RF field value effects; frequency limits; long GaAs samples; microwave generation; mm wave generation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790270
  • Filename
    4243371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951338