Title :
Micro-Corrosion of Al-Cu Bonding Pads
Author :
Thomas, Simon ; Berg, Howard M.
Author_Institution :
Motorola,Phoenix,AZ
fDate :
6/1/1987 12:00:00 AM
Abstract :
Aluminum metallization films with copper additions are found to exhibit highly localized pitting in the presence of moisture. Galvanic action of aluminum surrounding Al2Cu theta phase particles causes localized aluminum corrosion. The thin layer of aluminum hydroxide corrosion product on the bonding pad creates an effective barrier to high-quality wire bonding.
Keywords :
Aluminum integrated circuit conductors; Corrosion; Integrated circuit bonding; Aluminum; Assembly; Copper; Corrosion; Metallization; Semiconductor films; Silicon; Surface topography; Wafer bonding; Wire;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCHMT.1987.1134741
