Title :
Numerical analysis of forward-biased diode structures based on direct-gap semiconductors
Author :
Velmre, E. ; Freidin, B.
Author_Institution :
Tallinn Polytechnic Institute, Electronics Department, Tallinn, USSR
Abstract :
A numerical model for investigation of the physical processes in forward-biased diode structures based on direct-gap semiconductors is described. The model is based on the numerical solution of the set of fundamental equations for semiconductors with boundary conditions on contacts. The effects related to the absorption of the recombination radiation are incorporated. Some results of calculations on GaAs are given.
Keywords :
III-V semiconductors; electron traps; gallium arsenide; numerical analysis; p-n homojunctions; semiconductor device models; GaAs; direct gap semiconductors; forward biased diode structures; numerical model; physical processes; recombination radiation absorption; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790277
